RSQ025P03 transistor 1/4 dc-dc converter (-30v, -2.5a) RSQ025P03 z z z z features 1) low on-resistance.(120m ? at 4.5v) 2) high power package.(p d =1.25w) 3) high speed switching. 4) low voltage drive.(4v) z applications z z z z external dimensions (units : mm) 1.6 2.8 0.4 0.16 ( 3 ) 0.85 ( 2 ) 2.9 ( 1 ) each lead has same dimensions abbreviatedsymbol : tp (6) (5) (4) tsmt6 dc-dc converter z z z z structure silicon p-channel mosfet z z z z packaging specifications taping RSQ025P03 type tr 3000 package basic ordering unit (pieces) code z z z z equivalent circuit (1) ? 1 ? 2 ? 1 esd protection diode (1)drain (2)drain (3)gate (4)source (5)drain (6)drain (2) (3) (4) (5) (6) ? 2 body diode
RSQ025P03 transistor 2/4 z z z z absolute maximum ratings (ta=25 c) parameter v v a a w c a a c v dss v gss i s p d tch i d i sp i dp tstg symbol ? 30 20 ? 1 ? 4 1.25 150 ? 55~ + 150 limits unit ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board drain ? source voltage gate ? source voltage drain current source current (body diode) total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 ? 1 ? 2 2.5 10 < = < = z z z z electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss y fs c oss c rss min. ? ? 30 ? ? 1.0 ? ? 1.2 ? ? ? ? ? ? 80 320 ? 85 60 10 ? ? 1 ? 2.5 110 ? 120 165 ? ? ? ? a v gs = 20v, v ds = 0v i d = ? 1 , v gs = 0v v ds = ? 30v, v gs = 0v v ds = ? 10 v, i d = ? 1.25a v ds = ? 10v, i d = ? 1 i d = ? 2.5 a, v gs = ? 10 v v ds = ? 10v, v gs = 0v f = 1mhz v a v m ? m ? pf s pf pf t d(on) ? 8 ? i d = ? 1.25a v dd ? 15v ns t r ? 11 ? v gs = ? 4.5 v ns t d(off) ? 33 ? r l = 12 ? ns t f ? 7 ? r gs = 10 ? ns typ. max. unit conditions gate-source leakage gate threshold voltage foward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time turn-off delay time rise time fall time drain-source breakdown voltage static drain-source on-state resistance zero gate voltage drain current total gate charge gate-source charge gate-drain charge forward voltage qg qgs qgd vsd m ? ? v nc nc nc ? 1.2 ? ? ? ? ? ? ? 145 4.4 1.0 1.4 ? 200 ma, ma i d = ? 1.25 a, v gs = ? 4.5 v i d = ? 1.25 a, v gs = ? 4.0 v v dd ? 15v v gs = ? 5 v i s = ? 0.9 a, v gs =0 v ? ? ? ? ? ? ? pulsed i d = ? 2.5a body diode characteristics (source-drain characteristics)
RSQ025P03 transistor 3/4 z z z z electrical characteristic curves fig.1 typical transfer characteristics 0 0.5 1.0 0.001 0.1 1 0.01 10 1.5 gate ? source voltage : ? v gs [ v ] drain current : ? i d (a) 2.0 2.5 3.0 3.5 4.0 ta = 125 c 75 c 25 c ? 25 c v ds =? 10v pulsed fig.2 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance ? 4.0v ? 10v v gs = ? 4v r ds ( on )[ m ?] vs.drain current ta = 25 c pulsed fig.3 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance r ds ( on )[ m ?] vs.drain current ta=125 75 25 ? 25 v gs =? 10v pulsed c c c c fig.4 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance ta=125 75 25 ? 25 r ds ( on )[ m ?] vs.drain ? current c c c c v gs =? 4.5v pulsed fig.5 static drain ? source on ? state resistance 0.1 1 10 100 1000 10 drain current : ? i d [ a ] static drain ? source on ? state resistance ta=125 75 25 ? 25 r ds ( on )[ m ?] vs.drain ? current v gs =? 4v pulsed c c c c 0 0.5 1.0 1.5 source ? drain voltage : ? v sd [ v ] fig.6 reverse drain current 0.01 reverse drain current : ? i dr [ a ] 0.1 10 1 2.0 ta=125 75 25 ? 25 source-drain voltage v gs = 0v pulsed c c c c 0.01 0.1 1 10 100 drain ? source voltage : ? v ds [ v ] fig.7 typical capactitance 10 100 10000 1000 vs.drain ? source voltage capacitance : c [ pf ] ciss coss crss ta = 25 c f = 1mhz v gs = 0v 0.01 0.1 1 10 drain current : ? i d [ a ] fig.8 switching characteristics 1 10 1000 100 td ( off ) td ( on ) tr tf switching time : t [ ns ] ta = 25 c v dd =? 15v v gs =? 10v r g = 10 ? pulsed fig.9 dynamic input characteristics 06 0 4 8 3 total gate charge : qg [ nc ] gate-source voltage: -v gs [ v ] 15 24 1 2 3 5 6 7 0.5 1.5 2.5 3.5 4.5 5.5 ta = 25 c v dd =? 15v i d =? 2.5v r g = 10 ? pulsed
RSQ025P03 transistor 4/4 z z z z measurement circuits fig.10 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 10% 90% 10% 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.11 switching waveforms 50% 50% pulse width fig.12 gate charge measurement circuit v gs r g v ds d.u.t. i d r l v dd i g (const) fig.13 gate charge waveforms v gs qg qgs qgd v g charge
appendix appendix1-rev1.0 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document use silicon as a basic material. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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